Abstract: Reliability issues with the gate oxide remain a significant obstacle to the widespread application of SiC MOSFET devices. This work reveals the gate oxide failure of SiC MOSFETs not only ...
Abstract: We have demonstrated performance enhancement of polycrystalline InOx FET by Ga-doping in ALD process & anneal with mobility of $81 ~\text{cm}^{2}/\text{Vs ...
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